Increased sensitivity of spin noise spectroscopy using homodyne detection in n -doped GaAs
نویسندگان
چکیده
منابع مشابه
Ultrahigh bandwidth spin noise spectroscopy: detection of large g-factor fluctuations in highly-n-doped GaAs.
We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing a sophisticated scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We apply the...
متن کاملSpin noise spectroscopy in GaAs.
We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures and find good agreement of the measured noise spectrum with ...
متن کاملNoise in homodyne detection.
A simple but rigorous analysis of the important sources of noise in homodyne detection is presented. Output noise and signal-to-noise ratios are compared for direct detection, conventional (one-port) homodyning, and two-port homodyning, in which one monitors both output ports of a 50-50 beam splitter. It is shown that two-port homodyning is insensitive to local-oscillator quadrature-phase noise...
متن کاملTheory of spin hall conductivity in n-doped GaAs.
We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al. [Science 306, 1910 (2004)].
متن کاملSuppression of electron spin relaxation in Mn-doped GaAs.
We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2018
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.97.125202